STMicroelectronics STP50N65DM6

包装/外壳

TO-220-3

安装类型

通孔

供应商器件包装

TO-220

Continuous Drain Current Id

33

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

19.2 ns

Vgs th - Gate-Source Threshold Voltage

4.75 V

Pd - Power Dissipation

250 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

52.5 nC

Tradename

MDmesh

Rds On - Drain-Source Resistance

91 mOhms

RoHS

Details

Typical Turn-Off Delay Time

59.6 ns

Id - Continuous Drain Current

33 A

Package

Tube

Base Product Number

STP50

Current - Continuous Drain (Id) @ 25℃

33A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

STMicroelectronics

Power Dissipation (Max)

250W (Tc)

Product Status

活跃

包装

Tube

操作温度

-55°C ~ 150°C (TJ)

系列

MDmesh™

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

功率耗散

250

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

91mOhm @ 16.5A, 10V

不同 Id 时 Vgs(th)（最大值）

4.75V @ 250µA

输入电容(Ciss)(Max)@Vds

2300 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

52.5 nC @ 10 V

上升时间

12 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±25V

产品类别

MOSFET

晶体管类型

1 N - Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET