STMicroelectronics STP60N043DM9

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220

厂商

STMicroelectronics

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

56A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

245W (Tc)

Base Product Number

STP60N

Package Type

TO-220

Vds - Drain-Source Breakdown Voltage

600 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

245 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

78.6 nC

Rds On - Drain-Source Resistance

43 mOhms

RoHS

Details

Id - Continuous Drain Current

56 A

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

Tube

子类别

MOSFETs

引脚数量

3

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

43mOhm @ 28A, 10V

不同 Id 时 Vgs(th)（最大值）

4.5V @ 250μA

输入电容(Ciss)(Max)@Vds

4675 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

78.6 nC @ 10 V

漏源电压 (Vdss)

600 V

Vgs（最大值）

±30V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET