STMicroelectronics STP80N600K6

包装/外壳

TO-220

Channel Mode

Enhancement

Id - Continuous Drain Current

7 A

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Pd - Power Dissipation

86 W

Qg - Gate Charge

10.7 nC

Rds On - Drain-Source Resistance

600 mOhms

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

800 V

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

4 V

技术

Si

通道数量

1 Channel