STMicroelectronics STW75N65DM6-4

安装类型

通孔

包装/外壳

TO-247-4

供应商器件包装

TO-247-4

厂商

STMicroelectronics

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

480W (Tc)

Qualification

-

Continuous Drain Current Id

75A

Number of Elements per Chip

1

Package Type

TO-247-4

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

40 ns

Vgs th - Gate-Source Threshold Voltage

4.75 V

Pd - Power Dissipation

480 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Unit Weight

0.214466 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

118 nC

Rds On - Drain-Source Resistance

36 mOhms

RoHS

Details

Typical Turn-Off Delay Time

130 ns

Id - Continuous Drain Current

75 A

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

Tube

子类别

MOSFETs

引脚数量

4

配置

Single

通道数量

1 Channel

功率耗散

480W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

36mOhm @ 37.5A, 10V

不同 Id 时 Vgs(th)（最大值）

4.75V @ 250μA

输入电容(Ciss)(Max)@Vds

5700 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

118 nC @ 10 V

上升时间

18 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±25V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET