STMicroelectronics STWA30N65DM6AG

安装类型

通孔

包装/外壳

TO-247-3

供应商器件包装

TO-247 Long Leads

厂商

STMicroelectronics

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

284W (Tc)

Base Product Number

STWA30

Continuous Drain Current Id

28

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

18 ns

Vgs th - Gate-Source Threshold Voltage

4.75 V

Qualification

AEC-Q101

Pd - Power Dissipation

284 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

600

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

46 nC

Tradename

MDmesh

Rds On - Drain-Source Resistance

110 mOhms

RoHS

Details

Typical Turn-Off Delay Time

46 ns

Id - Continuous Drain Current

28 A

系列

Automotive, AEC-Q101

操作温度

-55°C ~ 150°C (TJ)

包装

Tube

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

284

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

110mOhm @ 14A, 10V

不同 Id 时 Vgs(th)（最大值）

4.75V @ 250μA

输入电容(Ciss)(Max)@Vds

2000 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

46 nC @ 10 V

上升时间

21 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±25V

产品类别

MOSFET

晶体管类型

1 N - Channel

场效应管特性

-

产品类别

MOSFET