STMicroelectronics STWA68N65DM6

安装类型

Corner Holes

包装/外壳

TO-247-3

供应商器件包装

TO-247 Long Leads

材料

Polystyrene

Resistance Properties

Abrasion-Resistant

Country of Origin

US

ECCN

EAR99

Continuous Drain Current Id

55

Package

Bulk

Base Product Number

STWA68

Current - Continuous Drain (Id) @ 25℃

55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

STMicroelectronics

Power Dissipation (Max)

431W (Tc)

Product Status

活跃

Qualification

-

Number of Elements per Chip

1

Package Type

TO-247

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

25 ns

Vgs th - Gate-Source Threshold Voltage

4.75 V

Pd - Power Dissipation

330 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

600

Mounting Styles

通孔

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

80 nC

Tradename

MDmesh

Rds On - Drain-Source Resistance

59 mOhms

RoHS

Details

Typical Turn-Off Delay Time

76 ns

Id - Continuous Drain Current

48 A

操作温度

-55°C ~ 150°C (TJ)

系列

-

包装

Tube

颜色

白底黑字

应用

Facility Identification

子类别

MOSFETs

技术

MOSFET (Metal Oxide)

引脚数量

3

通道数量

1 Channel

功率耗散

431

照明

不发光

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

59mOhm @ 24A, 10V

不同 Id 时 Vgs(th)（最大值）

4.75V @ 250µA

输入电容(Ciss)(Max)@Vds

3528 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

80 nC @ 10 V

上升时间

32 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±25V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

语言

English

产品类别

MOSFET