STMicroelectronics STWA75N65DM6

包装/外壳

TO-247-3

安装类型

通孔

供应商器件包装

TO-247 Long Leads

Power Dissipation (Max)

480W (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

75A (Tc)

Product Status

活跃

Package

Tube

厂商

STMicroelectronics

Qualification

-

Continuous Drain Current Id

75A

Number of Elements per Chip

1

Package Type

TO-247-4

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

4.75 V

Pd - Power Dissipation

480 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Unit Weight

0.215171 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

600

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

118 nC

Rds On - Drain-Source Resistance

36 mOhms

RoHS

Details

Id - Continuous Drain Current

75 A

操作温度

-55°C ~ 150°C (TJ)

系列

-

包装

Tube

子类别

MOSFETs

引脚数量

4

通道数量

1 Channel

功率耗散

480W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

36mOhm @ 37.5A, 10V

不同 Id 时 Vgs(th)（最大值）

4.75V @ 250μA

输入电容(Ciss)(Max)@Vds

5700 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

118 nC @ 10 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

±25V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品

MOSFET

产品类别

MOSFET