Texas Instruments CSD16321Q5T

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

8-VSON-CLIP (5x6)

厂商

德州仪器

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

29A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

3V, 8V

Power Dissipation (Max)

3.1W (Ta), 113W (Tc)

Vds - Drain-Source Breakdown Voltage

25 V

Typical Turn-On Delay Time

9 ns

Vgs th - Gate-Source Threshold Voltage

1.4 V

Pd - Power Dissipation

113 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V, + 10 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

250

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

德州仪器

Brand

德州仪器

Qg - Gate Charge

14 nC

Rds On - Drain-Source Resistance

2.4 mOhms

RoHS

Details

Typical Turn-Off Delay Time

27 ns

Id - Continuous Drain Current

177 A

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

2.4mOhm @ 25A, 8V

不同 Id 时 Vgs(th)（最大值）

1.4V @ 250μA

输入电容(Ciss)(Max)@Vds

3100 pF @ 12.5 V

门极电荷(Qg)(最大)@Vgs

19 nC @ 4.5 V

上升时间

15 ns

漏源电压 (Vdss)

25 V

Vgs（最大值）

+10V, -8V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET