TT Electronics / Semelab D1001UK

包装/外壳

DA

材料

Si

ECCN (US)

EAR99

HTS

8541.29.00.95

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

DMOS

Maximum Drain Source Voltage (V)

70

Maximum Gate Source Voltage (V)

±20

Maximum VSWR

20(Min)

Maximum Continuous Drain Current (A)

5

Maximum Drain Source Resistance (mOhm)

1000(Typ)@20V

Typical Input Capacitance @ Vds (pF)

60(Max)@28V

Maximum Power Dissipation (mW)

50000

Output Power (W)

20

Typical Power Gain (dB)

16(Min)

Maximum Frequency (MHz)

175

Minimum Frequency (MHz)

1

Typical Drain Efficiency (%)

50(Min)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Standard Package Name

DA型壳体

Supplier Package

DA型壳体

Military

无

Mounting

Screw

Package Height

6.6

Package Length

24.76

Package Width

9.52

PCB changed

4

Vds - Drain-Source Breakdown Voltage

70 V

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Mounting Styles

SMD/SMT

Rds On - Drain-Source Resistance

1 Ohms

Id - Continuous Drain Current

5 A

零件状态

活跃

技术

Si

引脚数量

4

工作频率

175 MHz

配置

单双源

输出功率

20 W

增益

16 dB

信道型

N

RoHS状态

符合RoHS标准