参数名
参数值
参数名
参数值
包装/外壳
DA
材料
Si
PCB changed
4
Package Width
12.7
Package Length
24.76
Package Height
6.6
Mounting
Screw
Military
无
Supplier Package
数据总线终端
Maximum Operating Temperature (°C)
200
Minimum Operating Temperature (°C)
-65
Typical Drain Efficiency (%)
50(Min)
Minimum Frequency (MHz)
1
Maximum Frequency (MHz)
175
Typical Power Gain (dB)
16(Min)
Output Power (W)
60
Maximum Power Dissipation (mW)
117000
Typical Input Capacitance @ Vds (pF)
180(Max)@0V
Maximum Continuous Drain Current (A)
15
Maximum VSWR
20(Min)
Maximum Gate Source Voltage (V)
±20
Maximum Drain Source Voltage (V)
70
Number of Elements per Chip
1
Channel Mode
Enhancement
HTS
8541.29.00.95
ECCN (US)
EAR99
Vds - Drain-Source Breakdown Voltage
70 V
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Mounting Styles
SMD/SMT
Id - Continuous Drain Current
15 A
零件状态
活跃
技术
Si
引脚数量
4
工作频率
175 MHz
配置
单双源
输出功率
60 W
增益
16 dB
信道型
N
RoHS状态
符合RoHS标准