TT Electronics / Semelab D1203UK

材料

Si

ECCN (US)

EAR99

HTS

8541.29.00.95

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

DMOS

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum VSWR

20(Min)

Maximum Continuous Drain Current (A)

30

Typical Input Capacitance @ Vds (pF)

180(Max)@0V

Maximum Power Dissipation (mW)

117000

Output Power (W)

30

Typical Power Gain (dB)

10(Min)

Maximum Frequency (MHz)

200

Minimum Frequency (MHz)

1

Typical Drain Efficiency (%)

50(Min)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Supplier Package

数据总线终端

Military

无

Mounting

Screw

Package Height

6.6

Package Length

24.76

Package Width

12.7

PCB changed

4

零件状态

Obsolete

引脚数量

4

配置

单双源

信道型

N

RoHS状态

符合RoHS标准