TT Electronics / Semelab D1208UK

材料

Si

ECCN (US)

EAR99

HTS

8541.29.00.95

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

DMOS

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum VSWR

20(Min)

Maximum Continuous Drain Current (A)

20

Typical Input Capacitance @ Vds (pF)

120(Max)@0V

Typical Reverse Transfer Capacitance @ Vds (pF)

8(Max)@12.5V

Typical Output Capacitance @ Vds (pF)

80(Max)@12.5V

Typical Forward Transconductance (S)

1.6(Min)

Maximum Power Dissipation (mW)

175000

Output Power (W)

40

Typical Power Gain (dB)

10(Min)

Maximum Frequency (MHz)

500

Minimum Frequency (MHz)

1

Typical Drain Efficiency (%)

50(Min)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

AEC Qualified

无

Supplier Package

Case DK

Military

无

Mounting

Screw

Package Height

4.82

Package Length

24.76

Package Width

6.47

PCB changed

5

零件状态

Obsolete

引脚数量

5

配置

双共源

信道型

N

RoHS状态

符合RoHS标准