TT Electronics / Semelab D1210UK

材料

Si

ECCN (US)

EAR99

HTS

8541.29.00.95

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

DMOS

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

7

Maximum VSWR

20

Maximum Continuous Drain Current (A)

10

Maximum Gate Source Leakage Current (nA)

1000

Maximum IDSS (uA)

1000

Typical Input Capacitance @ Vds (pF)

60(Max)@0V

Typical Reverse Transfer Capacitance @ Vds (pF)

4(Max)@12.5V

Typical Output Capacitance @ Vds (pF)

40(Max)@12.5V

Typical Forward Transconductance (S)

0.8(Min)

Maximum Power Dissipation (mW)

50000

Output Power (W)

10

Typical Power Gain (dB)

10(Min)

Maximum Frequency (MHz)

175

Minimum Frequency (MHz)

1

Typical Drain Efficiency (%)

50(Min)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

AEC Qualified

无

Standard Package Name

DA型壳体

Supplier Package

DA型壳体

Military

无

Mounting

Screw

Package Height

6.6

Package Length

24.76

Package Width

9.52

PCB changed

4

零件状态

Obsolete

引脚数量

4

配置

单双源

信道型

N

RoHS状态

符合RoHS标准