TT Electronics / Semelab D1222UK

ECCN (US)

EAR99

HTS

8541.29.00.95

Number of Elements per Chip

2

Process Technology

DMOS

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

7

Maximum VSWR

20

Maximum Continuous Drain Current (A)

30

Maximum Gate Source Leakage Current (nA)

1000

Maximum IDSS (uA)

1000

Typical Input Capacitance @ Vds (pF)

180(Max)@0V

Typical Reverse Transfer Capacitance @ Vds (pF)

12(Max)@12.5V

Typical Output Capacitance @ Vds (pF)

120(Max)@12.5V

Typical Forward Transconductance (S)

2.4(Min)

Maximum Power Dissipation (mW)

290000

Typical Power Gain (dB)

10(Min)@12.5V

Maximum Frequency (MHz)

500

Minimum Frequency (MHz)

1

Typical Drain Efficiency (%)

50(Min)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

AEC Qualified

无

Supplier Package

Case DK

Military

无

Mounting

Screw

Package Height

4.82

Package Length

24.76

Package Width

6.47

PCB changed

5

零件状态

Obsolete

引脚数量

5

配置

双共源

RoHS状态

符合RoHS标准