参数名
参数值
参数名
参数值
包装/外壳
DP
材料
Si
PCB changed
3
Package Width
6.35
Package Length
18.92
Package Height
5.08
Mounting
Screw
Military
无
Supplier Package
DP 外壳
Standard Package Name
Module
AEC Qualified
无
Maximum Operating Temperature (°C)
200
Minimum Operating Temperature (°C)
-65
Typical Drain Efficiency (%)
40(Min)
Minimum Frequency (MHz)
0
Maximum Frequency (MHz)
1000
Typical Power Gain (dB)
13(Min)
Output Power (W)
5
Maximum Power Dissipation (mW)
29000
Typical Input Capacitance @ Vds (pF)
20(Max)@0V
Maximum Continuous Drain Current (A)
2
Maximum VSWR
20(Min)
Maximum Gate Source Voltage (V)
±20
Maximum Drain Source Voltage (V)
65
Process Technology
DMOS
Number of Elements per Chip
1
Channel Mode
Enhancement
HTS
8541.29.00.95
ECCN (US)
EAR99
Vds - Drain-Source Breakdown Voltage
65 V
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Mounting Styles
SMD/SMT
Id - Continuous Drain Current
2 A
零件状态
活跃
技术
Si
引脚数量
3
工作频率
1 GHz
配置
Single
输出功率
5 W
增益
13 dB
信道型
N
RoHS状态
符合RoHS标准