TT Electronics / Semelab D2002UK.04

材料

Si

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

DMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

±20

Maximum VSWR

20(Min)

Maximum Continuous Drain Current (A)

2

Typical Input Capacitance @ Vds (pF)

20(Max)@0V

Maximum Power Dissipation (mW)

29000

Output Power (W)

5

Typical Power Gain (dB)

13(Min)

Maximum Frequency (MHz)

1000

Minimum Frequency (MHz)

0

Typical Drain Efficiency (%)

40(Min)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

AEC Qualified

无

Standard Package Name

Module

Supplier Package

DP 外壳

Military

无

Mounting

Screw

Package Height

5.08

Package Length

18.92

Package Width

6.35

PCB changed

3

零件状态

活跃

引脚数量

3

配置

Single

信道型

N

RoHS状态

符合RoHS标准