TT Electronics / Semelab D2008UK

材料

Si

ECCN (US)

EAR99

HTS

8541.29.00.95

Number of Elements per Chip

1

Process Technology

DMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

7

Maximum VSWR

20

Maximum Continuous Drain Current (A)

2

Maximum Gate Source Leakage Current (nA)

1000

Maximum IDSS (uA)

2000

Typical Input Capacitance @ Vds (pF)

20(Max)@0V

Typical Reverse Transfer Capacitance @ Vds (pF)

1(Max)@28V

Typical Output Capacitance @ Vds (pF)

11(Max)@28V

Typical Forward Transconductance (S)

0.36(Min)

Maximum Power Dissipation (mW)

14000

Output Power (W)

5

Typical Power Gain (dB)

13(Min)

Maximum Frequency (MHz)

400

Typical Drain Efficiency (%)

40(Min)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Automotive

无

Standard Package Name

TO-205-AF

Supplier Package

TO-39

Military

无

Mounting

通孔

Package Height

4.95(Max)

PCB changed

3

Lead Shape

通孔

零件状态

Obsolete

引脚数量

3

配置

Single

直径

9.4(Max)

RoHS状态

符合RoHS标准