TT Electronics / Semelab D2009UK

包装/外壳

DQ

材料

Si

ECCN (US)

EAR99

HTS

8541.29.00.75

Number of Elements per Chip

2

Process Technology

DMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

7

Maximum VSWR

20

Maximum Continuous Drain Current (A)

2

Maximum Gate Source Leakage Current (nA)

1000

Maximum IDSS (uA)

2000

Typical Input Capacitance @ Vds (pF)

24(Max)@28V

Typical Reverse Transfer Capacitance @ Vds (pF)

1(Max)@28V

Typical Output Capacitance @ Vds (pF)

12(Max)@28V

Typical Forward Transconductance (S)

0.36(Min)

Maximum Power Dissipation (mW)

58000

Typical Power Gain (dB)

10(Min)

Maximum Frequency (MHz)

1000

Minimum Frequency (MHz)

50

Typical Drain Efficiency (%)

40(Min)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Automotive

无

Supplier Package

DQ外壳

Military

无

Mounting

Screw

Package Height

5.08

Package Length

18.9

Package Width

6.35

PCB changed

5

Vds - Drain-Source Breakdown Voltage

65 V

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Mounting Styles

SMD/SMT

Id - Continuous Drain Current

2 A

零件状态

活跃

技术

Si

引脚数量

5

工作频率

1 GHz

配置

双共源

输出功率

10 W

增益

10 dB

RoHS状态

符合RoHS标准