TT Electronics / Semelab D2014UK

包装/外壳

SOT-171-6

材料

Si

ECCN (US)

EAR99

HTS

8541.29.00.95

Number of Elements per Chip

1

Process Technology

DMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

±20

Maximum VSWR

20(Min)

Maximum Continuous Drain Current (A)

1

Typical Input Capacitance @ Vds (pF)

12(Max)@28V

Typical Reverse Transfer Capacitance @ Vds (pF)

0.5(Max)@28V

Typical Output Capacitance @ Vds (pF)

6(Max)@28V

Typical Forward Transconductance (S)

0.18(Min)

Maximum Power Dissipation (mW)

17500

Typical Power Gain (dB)

13(Min)

Maximum Frequency (MHz)

1000

Minimum Frequency (MHz)

0

Typical Drain Efficiency (%)

40(Min)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Supplier Package

SOT-171

Military

无

Mounting

Screw

Package Height

7.11(Max)

Package Length

24.77

Package Width

5.84

PCB changed

6

Vds - Drain-Source Breakdown Voltage

65 V

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Mounting Styles

SMD/SMT

Id - Continuous Drain Current

1 A

零件状态

活跃

技术

Si

引脚数量

6

工作频率

500 MHz

配置

单四源

输出功率

2.5 W

增益

13 dB

信道型

N

RoHS状态

符合RoHS标准