TT Electronics / Semelab D2016UK

材料

Si

ECCN (US)

EAR99

HTS

8541.29.00.75

Number of Elements per Chip

2

Process Technology

DMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

7

Maximum VSWR

20

Maximum Continuous Drain Current (A)

6

Maximum Gate Source Leakage Current (nA)

1000

Maximum IDSS (uA)

6000

Typical Input Capacitance @ Vds (pF)

72(Max)@0V

Typical Reverse Transfer Capacitance @ Vds (pF)

3(Max)@28V

Typical Output Capacitance @ Vds (pF)

36(Max)@28V

Typical Forward Transconductance (S)

1.08(Min)

Maximum Power Dissipation (mW)

117000

Typical Power Gain (dB)

10(Min)

Minimum Frequency (MHz)

2000

Typical Drain Efficiency (%)

40(Min)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Supplier Package

Case DK

Military

无

Mounting

Screw

Package Height

4.82

Package Length

24.76

Package Width

6.47

PCB changed

5

零件状态

Obsolete

引脚数量

5

配置

双共源

RoHS状态

符合RoHS标准