TT Electronics / Semelab D2021UKTR

材料

Si

ECCN (US)

EAR99

Number of Elements per Chip

1

Process Technology

DMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

7

Maximum VSWR

20(Min)

Maximum Continuous Drain Current (A)

3

Maximum Gate Source Leakage Current (nA)

1000

Maximum IDSS (uA)

3000

Typical Input Capacitance @ Vds (pF)

36(Max)@0V

Typical Reverse Transfer Capacitance @ Vds (pF)

1.5(Max)@28V

Typical Output Capacitance @ Vds (pF)

18(Max)@28V

Typical Forward Transconductance (S)

0.54(Min)

Maximum Power Dissipation (mW)

17500

Output Power (W)

7.5

Typical Power Gain (dB)

13(Min)

Maximum Frequency (MHz)

1000

Minimum Frequency (MHz)

0

Typical Drain Efficiency (%)

40(Min)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

AEC Qualified

无

Standard Package Name

SOP

Supplier Package

SO

Military

无

Mounting

表面贴装

Package Height

2.18

Package Length

5.08

Package Width

4.06

PCB changed

8

Lead Shape

Gull-wing

零件状态

活跃

引脚数量

8

配置

单路 双漏 双门 四源

RoHS状态

符合RoHS标准