参数名
参数值
参数名
参数值
材料
Si
ECCN (US)
EAR99
HTS
8541.29.00.95
Channel Mode
Enhancement
Number of Elements per Chip
2
PCB changed
5
Package Width
6.47
Package Length
24.76
Package Height
4.82
Mounting
Screw
Military
无
Supplier Package
Case DK
Automotive
无
Maximum Operating Temperature (°C)
200
Minimum Operating Temperature (°C)
-65
Typical Drain Efficiency (%)
40(Min)
Maximum Frequency (MHz)
1000
Typical Power Gain (dB)
13(Min)
Maximum Power Dissipation (mW)
35000
Typical Forward Transconductance (S)
0.18(Min)
Typical Output Capacitance @ Vds (pF)
6(Max)@28V
Typical Reverse Transfer Capacitance @ Vds (pF)
0.5(Max)@28V
Typical Input Capacitance @ Vds (pF)
12(Max)@28V
Maximum IDSS (uA)
1000
Maximum Gate Source Leakage Current (nA)
1000
Maximum Continuous Drain Current (A)
1
Maximum VSWR
20(Min)
Maximum Gate Threshold Voltage (V)
7
Maximum Gate Source Voltage (V)
±20
Maximum Drain Source Voltage (V)
65
Process Technology
DMOS
零件状态
Obsolete
引脚数量
5
配置
双共源
信道型
N
RoHS状态
符合RoHS标准