TT Electronics / Semelab D2081UK.FTR

材料

Si

ECCN (US)

EAR99

HTS

8541.29.00.95

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

DMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

±20

Maximum VSWR

10(Min)

Maximum Continuous Drain Current (A)

0.2

Typical Input Capacitance @ Vds (pF)

12(Max)@0V

Typical Reverse Transfer Capacitance @ Vds (pF)

0.5(Max)@28V

Typical Output Capacitance @ Vds (pF)

6(Max)@28V

Typical Forward Transconductance (S)

0.18(Min)

Maximum Power Dissipation (mW)

2000

Output Power (W)

0.75

Typical Power Gain (dB)

11(Min)

Maximum Frequency (MHz)

2500

Minimum Frequency (MHz)

0

Typical Drain Efficiency (%)

40(Min)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Standard Package Name

SOT-223

Supplier Package

SOT-223

Military

无

Mounting

表面贴装

Package Height

1.6(Max)

Package Length

6.7(Max)

Package Width

3.7(Max)

PCB changed

3

Tab

Tab

Lead Shape

Gull-wing

零件状态

活跃

引脚数量

4

配置

单排双泄

信道型

N

RoHS状态

符合RoHS标准