TT Electronics / Semelab D2203UK

材料

Si

ECCN (US)

EAR99

HTS

8541.29.00.95

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

DMOS

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum VSWR

20(Min)

Maximum Continuous Drain Current (A)

2

Typical Input Capacitance @ Vds (pF)

12(Max)@12.5V

Typical Reverse Transfer Capacitance @ Vds (pF)

1(Max)@12.5V

Typical Output Capacitance @ Vds (pF)

10(Max)@12.5V

Typical Forward Transconductance (S)

0.18(Min)

Maximum Power Dissipation (mW)

35000

Output Power (W)

5

Typical Power Gain (dB)

10(Min)

Maximum Frequency (MHz)

1000

Minimum Frequency (MHz)

1

Typical Drain Efficiency (%)

40(Min)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

AEC Qualified

无

Supplier Package

DQ外壳

Military

无

Mounting

Screw

Package Height

4.82

Package Length

18.9

Package Width

6.35

PCB changed

5

零件状态

活跃

引脚数量

5

配置

双共源

信道型

N

RoHS状态

符合RoHS标准