TT Electronics / Semelab D2220UK

包装/外壳

SOIC-8

材料

Si

ECCN (US)

EAR99

HTS

8541.29.00.95

Number of Elements per Chip

2

Process Technology

DMOS

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum VSWR

20(Min)

Maximum Continuous Drain Current (A)

4

Typical Input Capacitance @ Vds (pF)

24(Max)@0V

Maximum Power Dissipation (mW)

17500

Output Power (W)

5

Typical Power Gain (dB)

10(Min)

Maximum Frequency (MHz)

2000

Minimum Frequency (MHz)

1

Typical Drain Efficiency (%)

40(Min)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

AEC Qualified

无

Standard Package Name

SOP

Supplier Package

SO

Military

无

Mounting

表面贴装

Package Height

2.18

Package Length

5.08

Package Width

4.06

PCB changed

8

Lead Shape

Gull-wing

Vds - Drain-Source Breakdown Voltage

40 V

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Mounting Styles

SMD/SMT

Id - Continuous Drain Current

4 A

零件状态

活跃

技术

Si

引脚数量

8

工作频率

1 GHz

配置

双四源

输出功率

5 W

增益

10 dB

RoHS状态

符合RoHS标准