TT Electronics / Semelab D2294UK

包装/外壳

SOT-171-6

材料

Si

ECCN (US)

EAR99

HTS

8541.29.00.95

Channel Mode

Enhancement

Number of Elements per Chip

1

Process Technology

DMOS

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum VSWR

20(Min)

Maximum Continuous Drain Current (A)

12

Typical Input Capacitance @ Vds (pF)

72(Max)@0V

Maximum Power Dissipation (mW)

50000

Output Power (W)

15

Typical Power Gain (dB)

11(Min)

Maximum Frequency (MHz)

1000

Minimum Frequency (MHz)

1

Typical Drain Efficiency (%)

50(Min)

Maximum Operating Temperature (°C)

200

Supplier Package

SOT-171

Military

无

Mounting

Screw

Package Height

7.11(Max)

Package Length

24.77

Package Width

5.84

PCB changed

6

Vds - Drain-Source Breakdown Voltage

40 V

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Mounting Styles

SMD/SMT

Id - Continuous Drain Current

12 A

零件状态

活跃

技术

Si

引脚数量

6

工作频率

500 MHz

配置

单四源

输出功率

15 W

增益

11 dB

信道型

N

RoHS状态

符合RoHS标准