参数名
参数值
参数名
参数值
材料
Si
ECCN (US)
EAR99
HTS
8541.29.00.95
Channel Mode
Enhancement
Number of Elements per Chip
2
Process Technology
DMOS
Maximum Drain Source Voltage (V)
125
Maximum Gate Source Voltage (V)
±20
Maximum VSWR
20(Min)
Maximum Continuous Drain Current (A)
18
Typical Input Capacitance @ Vds (pF)
360(Max)@50V
Typical Reverse Transfer Capacitance @ Vds (pF)
9(Max)@50V
PCB changed
5
Package Width
10.16
Package Length
34.03
Package Height
5.08
Mounting
Screw
Military
无
Supplier Package
DR型壳体
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-65
Typical Drain Efficiency (%)
60(Min)
Minimum Frequency (MHz)
1
Maximum Frequency (MHz)
200
Typical Power Gain (dB)
13(Min)
Output Power (W)
300
Maximum Power Dissipation (mW)
438000
Typical Forward Transconductance (S)
4.8(Min)
Typical Output Capacitance @ Vds (pF)
150(Max)@50V
零件状态
Obsolete
引脚数量
5
配置
双共源
信道型
N
RoHS状态
符合RoHS标准