Vishay SIHFL9110GE3

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Operating Junction Temperature (°C)

-55 to 150

Maximum Continuous Drain Current (A)

1.1

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

100

Maximum Drain Source Resistance (MOhm)

1200@10V

Typical Gate Charge @ Vgs (nC)

8.7(Max)@10V

Typical Gate Charge @ 10V (nC)

8.7(Max)

Typical Gate to Drain Charge (nC)

4.1(Max)

Typical Gate to Source Charge (nC)

2.2(Max)

Typical Reverse Recovery Charge (nC)

150

Typical Input Capacitance @ Vds (pF)

200@25V

Typical Reverse Transfer Capacitance @ Vds (pF)

18@25V

Minimum Gate Threshold Voltage (V)

2

Typical Output Capacitance (pF)

94

Maximum Power Dissipation (mW)

2000

Typical Fall Time (ns)

17

Typical Rise Time (ns)

27

Typical Turn-Off Delay Time (ns)

15

Typical Turn-On Delay Time (ns)

10

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Maximum Positive Gate Source Voltage (V)

20

Maximum Power Dissipation on PCB @ TC=25°C (W)

2

Maximum Pulsed Drain Current @ TC=25°C (A)

8.8

Maximum Junction Ambient Thermal Resistance on PCB (°C/W)

60

Typical Gate Plateau Voltage (V)

6

Typical Reverse Recovery Time (ns)

80

Maximum Diode Forward Voltage (V)

5.5

Mounting

表面贴装

Package Height

1.8(Max) - 0.061

Package Width

3.7(Max)

Package Length

6.7(Max)

PCB changed

3

Tab

Tab

Standard Package Name

SOT

Supplier Package

SOT-223

Lead Shape

Gull-wing

零件状态

活跃

引脚数量

4

配置

单排双泄

信道型

P