N/A

-

260

BGA

DDR

1.3500 V

Synchronous

4 MWords

18 Bit

表面贴装

Industrial grade

725 MHz

-40 to 85 °C

Pipelined

72 Mbit

Industrial

N/A

-

8 Weeks

YES

100

100

TQFP

SDR

3.3000 V

3 V

Synchronous

2 MWords

36 Bit

3.6 V

表面贴装

125 MHz

LQFP,

FLATPACK, LOW PROFILE

3

2000000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

有

GS8640FZ36GT-8I

2.5 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.6

QFP

Industrial grade

-40 to 85 °C

e3

有

3A991.B.2.B

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY.

8542.32.00.41

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

4

SYNCHRONOUS

Flow-Through

2MX36

1.6 mm

36

21 Bit

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2.75 V

2.25 V

20 mm

14 mm

N/A

-

165

450 MHz

1.8000 V

1.7 V

Synchronous

36 Bit

1.9 V

-55 to 125 °C

0.45

72

N/A

-

0603 (1608 Metric)

260

0603

KOA Speer Electronics, Inc.

活跃

725 MHz

BGA

1.3500 V

Synchronous

18 Bit

Tape & Reel (TR)

RS73G1J

-55°C ~ 155°C

RS73

0.063 L x 0.031 W (1.60mm x 0.80mm)

±0.25%

2

±50ppm/°C

1.37 kOhms

厚膜

0.2W, 1/5W

0.4

72

Automotive AEC-Q200, Moisture Resistant

0.022 (0.55mm)

AEC-Q200

N/A

-

12 Weeks

表面贴装

4-SMD, No Lead

YES

165

165

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

0.45 ns

85 °C

无

GS8342Q36BD-250IT

250 MHz

1048576 words

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.36

BGA

-20°C ~ 70°C

Tape & Reel (TR)

SiT8208

0.276 L x 0.197 W (7.00mm x 5.00mm)

活跃

3A991.B.2.B

XO (Standard)

流水线结构

8542.32.00.41

SRAMs

CMOS

2.5V

BOTTOM

BALL

1

1 mm

compliant

20MHz

±10ppm

LVCMOS, LVTTL

R-PBGA-B165

Standby (Power Down)

MEMS

33mA

不合格

1.5/1.8,1.8 V

INDUSTRIAL

70µA

SYNCHRONOUS

0.835 mA

1MX36

3-STATE

1.4 mm

36

0.215 A

37748736 bit

PARALLEL

SEPARATE

QDR SRAM

--

1.7 V

1.9 V

1.7 V

0.039 (1.00mm)

15 mm

13 mm

--

N/A

-

12 Weeks

表面贴装

4-SMD, No Lead

YES

119

BGA

2.5 V

262144 words

GS84018CB-200IT

无

85 °C

未说明

-40 °C

PLASTIC/EPOXY

256000

网格排列

BGA,

5.72

GSI TECHNOLOGY

活跃

GSI技术

RECTANGULAR

-20°C ~ 70°C

Tape & Reel (TR)

SiT8209

0.197 L x 0.126 W (5.00mm x 3.20mm)

活跃

3A991.B.2.B

XO (Standard)

IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE

CMOS

2.5V

BOTTOM

BALL

未说明

1

1.27 mm

compliant

100MHz

±10ppm

LVCMOS, LVTTL

R-PBGA-B119

Standby (Power Down)

MEMS

36mA

INDUSTRIAL

70µA

SYNCHRONOUS

256KX18

1.99 mm

18

4718592 bit

PARALLEL

缓存SRAM

--

2.7 V

2.3 V

0.032 (0.80mm)

22 mm

14 mm

--

N/A

-

8 Weeks

YES

165

165

Non-Compliant

表面贴装

2, 2.7 V

36 Bit

1 MWords

Synchronous

1.7, 2.3 V

1.8, 2.5 V

SDR

FBGA

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

7.5 ns

85 °C

无

GS8321Z36AD-150IVT

150 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.16

BGA

Industrial grade

-40 to 100 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

INDUSTRIAL

4

SYNCHRONOUS

0.165 mA

Flow-Through/Pipelined

1MX36

3-STATE

1.4 mm

36

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

15 mm

13 mm

N/A

-

YES

260

GS81314PT37GK-933

4194304 words

1.3 V

HBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.79

HBGA,

GRID ARRAY, HEAT SINK/SLUG

4000000

PLASTIC/EPOXY

85 °C

3A991.B.2.B

8542.32.00.41

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B260

OTHER

SYNCHRONOUS

4MX36

2.3 mm

36

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.25 V

22 mm

14 mm

N/A

-

BGA-260

YES

260

- 40 C

+ 100 C

SMD/SMT

QDR-IVe

有

10

SigmaQuad-IVe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

8000000

PLASTIC/EPOXY

未说明

有

GS81314LQ18GK-106I

8388608 words

1.2 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.8

Details

1.066 GHz

Parallel

1.2 V

Tray

GS81314LQ18GK

3A991.B.2.B

SigmaQuad-IVe B2

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

144 Mbit

SYNCHRONOUS

2.3 A

8 M x 18

2.3 mm

18

150994944 bit

PARALLEL

QDR SRAM

1.35 V

1.15 V

22 mm

14 mm

N/A

-

BGA-260

YES

260

Parallel

1.2 V

0 C

+ 85 C

SMD/SMT

QDR-IVe

有

10

SigmaQuad-IVe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

8000000

PLASTIC/EPOXY

未说明

85 °C

有

GS81314LD19GK-800

8388608 words

1.2 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.8

Details

800 MHz

Tray

GS81314LD19GK

3A991.B.2.B

SigmaQuad-IVe B4

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

144 Mbit

SYNCHRONOUS

2.05 A

8 M x 18

2.3 mm

18

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.15 V

22 mm

14 mm

N/A

-

TQFP-100

YES

100

SMD/SMT

SDR

有

15

SyncBurst

3.6 V

LQFP,

FLATPACK, LOW PROFILE

8000000

PLASTIC/EPOXY

85 °C

GS8128018GT-333

8388608 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

Details

333 MHz

Parallel

2.3 V

0 C

+ 85 C

Tray

GS8128018GT

3A991.B.2.B

Pipeline/Flow Through

IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE

8542.32.00.41

CMOS

QUAD

鸥翼

1

0.65 mm

compliant

R-PQFP-G100

OTHER

144 Mbit

SYNCHRONOUS

400 mA, 530 mA

4.5 ns

8 M x 18

1.6 mm

18

150994944 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

20 mm

14 mm

N/A

-

BGA-260

YES

260

Parallel

1.25 V

0 C

+ 85 C

SMD/SMT

DDR

有

10

SigmaQuad-IIIe

1.35 V

BGA,

网格排列

8000000

PLASTIC/EPOXY

未说明

85 °C

有

GS81313LD18GK-833

8388608 words

1.25 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.75

Details

833 MHz

Tray

GS81313LD18GK

3A991.B.2.B

SigmaQuad-IIIe B4

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

144 Mbit

SYNCHRONOUS

1.9 A

8 M x 18

2.3 mm

18

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.2 V

22 mm

14 mm

N/A

-

BGA-260

YES

260

有

10

SigmaQuad-IIIe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

8000000

PLASTIC/EPOXY

GS81313HD18GK-714I

8388608 words

1.25 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.75

Details

714 MHz

Parallel

1.2 V

- 40 C

+ 100 C

SMD/SMT

DDR-III

Tray

GS81313HD18GK

3A991.B.2.B

SigmaQuad-IIIe B4

8542.32.00.41

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B260

144 Mbit

SYNCHRONOUS

1.7 A

8 M x 18

2.3 mm

18

150994944 bit

PARALLEL

DDR SRAM

1.35 V

1.2 V

22 mm

14 mm

N/A

-

BGA-260

YES

260

260

GS82583ED18GK-675I

1.2 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.74

Industrial grade

SMD/SMT

QDR-III

有

10

SigmaQuad-IIIe

+ 100 C

- 40 C

1.25 V

Parallel

675 MHz

Details

675 MHz

BGA

SDR

1.3 V

1.25 V

16 MWords

18 Bit

1.35 V

表面贴装

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

16000000

PLASTIC/EPOXY

未说明

有

-40 to 100 °C

Tray

GS82583ED18GK

e1

3A991.B.2.B

SigmaQuad-IIIe B4

Tin/Silver/Copper (Sn/Ag/Cu)

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

288 Mbit

1

SYNCHRONOUS

1.55 A

16 M x 18

2.3 mm

18

288 Mbit

301989888 bit

Industrial

PARALLEL

QDR SRAM

1.25 V

1.15 V

22 mm

14 mm

N/A

-

BGA-260

YES

260

有

10

SigmaDDR-IIIe

HBGA, BGA260,13X20,40

GRID ARRAY, HEAT SINK/SLUG

8000000

PLASTIC/EPOXY

BGA260,13X20,40

85 °C

有

GS81313HT18GK-550

550 MHz

8388608 words

1.2 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.74

Details

550 MHz

Parallel

0 C

+ 70 C

SMD/SMT

Tray

GS81313HT18GK

3A991.B.2.B

Synchronous

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B260

不合格

1.2 V

OTHER

SYNCHRONOUS

8MX18

3-STATE

2.3 mm

18

150994944 bit

PARALLEL

COMMON

DDR SRAM

1.15 V

1.35 V

1.15 V

22 mm

14 mm

N/A

-

BGA-260

YES

260

Parallel

1.2 V

0 C

+ 85 C

SMD/SMT

QDR-IVe

有

10

SigmaQuad-IVe

1.35 V

HBGA,

GRID ARRAY, HEAT SINK/SLUG

8000000

PLASTIC/EPOXY

未说明

85 °C

有

GS81314LQ18GK-106

8388608 words

1.2 V

HBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.8

Details

1.066 GHz

Tray

GS81314LQ18GK

3A991.B.2.B

SigmaQuad-IVe B2

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

OTHER

144 Mbit

SYNCHRONOUS

2.3 A

8 M x 18

2.3 mm

18

150994944 bit

PARALLEL

QDR SRAM

1.35 V

1.15 V

22 mm

14 mm

N/A

-

TQFP-100

YES

100

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

128000

PLASTIC/EPOXY

未说明

7 ns

70 °C

有

GS84032CGT-166

131072 words

3.3 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.67

According to IEC/EN 60332-3-24

-55 - 145

Polyolefin

Tinned

-35 - 120

3.6

Colour

2.5

300

有

Several

500

Class 5 = flexible

有

166 MHz

+ 70 C

3.6 V

0 C

Tray

GS84032CGT

3A991.B.2.B

Pipeline/Flow Through

Pure Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

4 Mbit

SYNCHRONOUS

135 mA, 160 mA

7 ns

128 k x 32

1.6 mm

32

SRAM

4194304 bit

PARALLEL

缓存SRAM

3.6 V

3 V

SRAM

20 mm

14 mm

N/A

-

YES

260

GSI TECHNOLOGY

5.8

无

According to IEC/EN 60332-1-2

-40 - 70

Polyvinyl chloride (PVC)

Purple

-5 - 70

9.3

None

Colour + rings

1.5

None

300

无

70

500

Polyvinyl chloride (PVC)

Class 5 = flexible

HBGA,

GRID ARRAY, HEAT SINK/SLUG

8000000

PLASTIC/EPOXY

85 °C

GS81314PD18GK-106

8388608 words

1.2 V

HBGA

RECTANGULAR

GSI技术

活跃

3A991.B.2.B

8542.32.00.41

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B260

OTHER

SYNCHRONOUS

8MX18

2.3 mm

18

150994944 bit

PARALLEL

QDR SRAM

1.35 V

1.15 V

22 mm

14 mm

N/A

-

12 Weeks

TQFP-100

YES

100

85 °C

有

GS81280E18GT-200V

8388608 words

1.8 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.73

200 MHz

+ 85 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

LQFP,

FLATPACK, LOW PROFILE

8000000

PLASTIC/EPOXY

未说明

GS81280E18GT

3A991.B.2.B

IT ALSO OPERATES AT 2.3 TO 2.7 V SUPPLY VOLTAGE

8542.32.00.41

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

OTHER

144 Mbit

SYNCHRONOUS

295 mA, 360 mA

6.5 ns

8 M x 18

1.6 mm

18

150994944 bit

PARALLEL

缓存SRAM

2 V

1.7 V

20 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

119

Polyurethane

119

A-3025-3

Dwyer Instruments

无

有

250 MHz

+ 85 C

3.6 V

- 40 C

42

SDR

SyncBurst

GSI技术

Parallel

SMD/SMT

2.3 V

BGA,

网格排列

256000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

85 °C

无

262144 words

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Tray

GS88236CB

e0

无

3A991.B.2.B

Pipeline/Flow Through

Tin/Lead (Sn/Pb)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

9 Mbit

SYNCHRONOUS

175 mA, 215 mA

5.5 ns

256 k x 36

1.77 mm

36

SRAM

9437184 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

Female to Female Coupling

SRAM

22 mm

14 mm

N/A

-

TQFP-100

YES

100

有

GS81280E18GT-400

8388608 words

2.5 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.73

400 MHz

+ 85 C

3.6 V

0 C

2.3 V

Parallel

SMD/SMT

LQFP,

FLATPACK, LOW PROFILE

8000000

PLASTIC/EPOXY

85 °C

1500

活跃

3A991.B.2.B

面板安装

IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE

8542.32.00.41

CMOS

240VAC, 480VAC

QUAD

鸥翼

1

0.65 mm

compliant

R-PQFP-G100

Terminals

OTHER

144 Mbit

SYNCHRONOUS

430 mA, 610 mA

Terminals

480VAC, 560VAC

4 ns

8 M x 18

1.6 mm

18

8.310 L x 7.250 W x 21.550 H (211.07mm x 184.15mm x 547.37mm)

150994944 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

9.5A (9.21kVA)

20 mm

14 mm

N/A

-

12 Weeks

YES

165

165

LBGA,

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS8182Q18BGD-250T

1048576 words

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.19

BGA

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

SYNCHRONOUS

1MX18

1.4 mm

18

18874368 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

15 mm

13 mm

N/A

-

10 Weeks

YES

144

LBGA,

GRID ARRAY, LOW PROFILE

64000000

PLASTIC/EPOXY

-40 °C

未说明

95 °C

有

GS4576C09GM-25I

67108864 words

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.09

自动刷新

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B144

INDUSTRIAL

1

SYNCHRONOUS

64MX9

1.25 mm

9

576

DDR DRAM

1.9 V

1.7 V

多库页面突发

18.5 mm

11 mm

N/A

-

TQFP-100

100

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

222.2 MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

0 to 70 °C

Tray

GS880F36CGT

流过

Memory & Data Storage

9 Mbit

4

180 mA

4.5 ns

Flow-Through

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

260

BGA

DDR

1.3500 V

Synchronous

2 MWords

36 Bit

表面贴装

Industrial grade

725 MHz

-40 to 85 °C

Pipelined

72 Mbit

Industrial