Advanced BLV10

包装/外壳

SOT-123

Emitter- Base Voltage VEBO

4 V

Pd - Power Dissipation

20 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

10

Unit Weight

0.411370 oz

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

螺钉安装

Gain Bandwidth Product fT

950 MHz

Manufacturer

Advanced Semiconductor, Inc.

Brand

Advanced Semiconductor, Inc.

Maximum DC Collector Current

4 A

RoHS

Details

Collector- Emitter Voltage VCEO Max

18 V

包装

Tray

类型

射频双极功率

子类别

Transistors

技术

Si

工作频率

175 MHz

配置

Single

产品类别

射频双极晶体管

晶体管类型

双极电源

连续集电极电流

1.5 A

产品类别

射频双极晶体管