Advanced MRF221

包装/外壳

211-07

表面安装

NO

Emitter- Base Voltage VEBO

4 V

Pd - Power Dissipation

31 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

5

Minimum Operating Temperature

- 65 C

Mounting Styles

螺钉安装

Manufacturer

Advanced Semiconductor, Inc.

Brand

Advanced Semiconductor, Inc.

RoHS

Details

Collector- Emitter Voltage VCEO Max

18 V

Package Description

,

Operating Temperature-Max

175 °C

Transition Frequency-Nom (fT)

175 MHz

Manufacturer Part Number

MRF221

Part Life Cycle Code

活跃

Ihs Manufacturer

ASI SEMICONDUCTOR INC

Risk Rank

5.6

包装

Tray

类型

射频双极功率

子类别

Transistors

技术

Si

Reach合规守则

unknown

工作频率

175 MHz

配置

Single

极性/通道类型

NPN

产品类别

射频双极晶体管

晶体管类型

双极电源

最大耗散功率(Abs)

31 W

集电极电流-最大值(IC)

2.5 A

最小直流增益（hFE）

5

连续集电极电流

2.5 A

产品类别

射频双极晶体管