Advanced MRF581

Emitter- Base Voltage VEBO

2.5 V

Pd - Power Dissipation

2.5 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

50

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

通孔

Manufacturer

Advanced Semiconductor, Inc.

Brand

Advanced Semiconductor, Inc.

Maximum DC Collector Current

200 mA

RoHS

Details

Collector- Emitter Voltage VCEO Max

18 V

子类别

Transistors

技术

Si

工作频率

1 GHz

配置

Single

产品类别

射频双极晶体管

晶体管类型

Bipolar

连续集电极电流

200 mA

产品类别

射频双极晶体管