Advanced MRF151G

Unit Weight

0.642339 oz

Factory Pack QuantityFactory Pack Quantity

1

Manufacturer

Advanced Semiconductor, Inc.

Brand

Advanced Semiconductor, Inc.

RoHS

Details

Vds - Drain-Source Breakdown Voltage

125 V

Transistor Polarity

Dual N-Channel

Maximum Operating Temperature

+ 200 C

Minimum Operating Temperature

- 65 C

Mounting Styles

SMD/SMT

Rds On - Drain-Source Resistance

5 mOhms

Id - Continuous Drain Current

40 A

包装

Tray

类型

射频功率MOSFET

子类别

MOSFETs

技术

Si

工作频率

175 MHz

输出功率

300 W

产品类别

射频MOSFET晶体管

增益

16 dB

产品类别

射频MOSFET晶体管