Advanced MRF174

包装/外壳

221-11-3

Vds - Drain-Source Breakdown Voltage

65 V

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

270 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 200 C

Vgs - Gate-Source Voltage

40 V

Minimum Operating Temperature

- 65 C

Mounting Styles

SMD/SMT

Manufacturer

Advanced Semiconductor, Inc.

Brand

Advanced Semiconductor, Inc.

RoHS

Details

Id - Continuous Drain Current

13 A

Rds On - Drain-Source Resistance

2.5 mOhms

包装

Tray

类型

射频功率MOSFET

子类别

MOSFETs

技术

Si

工作频率

200 MHz

配置

Single

输出功率

125 W

产品类别

射频MOSFET晶体管

增益

11.8 dB

产品类别

射频MOSFET晶体管