AMI Semiconductor NVMFD5483NLT1G
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NVMFD5483NLT1G
137-NVMFD5483NLT1G
晶体管 - FET,MOSFET - 阵列
8-PowerTDFN
大陆
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NVMFD5483NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from AMI Semiconductor stock available at utmel
1最小包装量--
NVMFD5483NLT1G详情
AMI Semiconductor NVMFD5483NLT1G重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-PowerTDFN
供应商器件包装
8-DFN (5x6) Dual Flag (SO8FL-Dual)
RoHS
Non-Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Continuous Drain (Id) @ 25℃
6.4A
操作温度
-55°C ~ 175°C (TJ)
系列
-
包装
Tape & Reel (TR)
湿度敏感性等级(MSL)
1 (Unlimited)
功率 - 最大
3.1W
场效应管类型
2 N-Channel (Dual)
Rds On(Max)@Id,Vgs
36 mOhm @ 15A, 10V
不同 Id 时 Vgs(th)(最大值)
2.5V @ 250µA
输入电容(Ciss)(Max)@Vds
668pF @ 25V
门极电荷(Qg)(最大)@Vgs
23.4nC @ 10V
漏源电压 (Vdss)
60V
场效应管特性
逻辑电平门
NVMFD5483NLT1G拓展信息
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