A Power microelectronics AP120N06P
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AP120N06P
1604-AP120N06P
晶体管 - FET,MOSFET - 单个
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65V 125A 172W 4.8mΩ@10V,55A 2.8V@250uA 1 N-Channel TO-220 MOSFETs ROHS
1最小包装量--
AP120N06P详情
A Power microelectronics AP120N06P重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
65V
Power Dissipation (Pd)
172W
Drain Source On Resistance (RDS(on)@Vgs,Id)
4.8mΩ@10V,55A
Gate Threshold Voltage (Vgs(th)@Id)
2.8V@250uA
Reverse Transfer Capacitance (Crss@Vds)
306pF@30V
Input Capacitance (Ciss@Vds)
3.135nF@30V
Total Gate Charge (Qg@Vgs)
77nC@10V
Package
Tube-packed
操作温度
-55℃~+150℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
125A
AP120N06P拓展信息
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
Shandong Jingdao Microelectronics
A Power microelectronics
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