A Power microelectronics AP6N03SI
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AP6N03SI
1604-AP6N03SI
晶体管 - FET,MOSFET - 单个
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30V 6A 29mΩ@4.5V,5A 1.5W 900mV@250uA 1 N-Channel SOT-89-3L MOSFETs ROHS
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AP6N03SI详情
A Power microelectronics AP6N03SI重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
30V
Drain Source On Resistance (RDS(on)@Vgs,Id)
29mΩ@4.5V,5A
Power Dissipation (Pd)
1.5W
Gate Threshold Voltage (Vgs(th)@Id)
900mV@250uA
Reverse Transfer Capacitance (Crss@Vds)
65pF@15V
Input Capacitance (Ciss@Vds)
572pF@15V
Total Gate Charge (Qg@Vgs)
Package
Tape & Reel (TR)
操作温度
-55℃~+150℃@(Tj)
类型
1 N-Channel
Continuous Drain Current (Id)
6A
AP6N03SI拓展信息
Hangzhou Silan Microelectronics
WPMtek(Wei Pan Microelectronics)
Shandong Jingdao Microelectronics
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哦! 它是空的。