Infineon BC857BWE6433XT

材料

Si

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.21.00.75

Category

双极小信号

Number of Elements per Chip

1

Maximum Collector Base Voltage (V)

50

Maximum Collector-Emitter Voltage (V)

45

Maximum Emitter Base Voltage (V)

5

Maximum Base Emitter Saturation Voltage (V)

0.7(Typ)@0.5mA@10mA|0.85(Typ)@5mA@100mA

Maximum Collector-Emitter Saturation Voltage (V)

[email protected]@10mA|0.65@5mA@100mA

Maximum DC Collector Current (A)

0.1

Minimum DC Current Gain

220@2mA@5V

Maximum Power Dissipation (mW)

250

Maximum Transition Frequency (MHz)

250(Typ)

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

汽车

包装

卷带

零件状态

Unconfirmed

类型

PNP

配置

Single