IPC218N04N3详情
Infineon IPC218N04N3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
晶体管元件材料
SILICON
Package Description
UNCASED CHIP, R-XXUC-N
Package Style
UNCASED CHIP
Package Body Material
UNSPECIFIED
Reflow Temperature-Max (s)
未说明
Rohs Code
有
Manufacturer Part Number
IPC218N04N3
Package Shape
RECTANGULAR
Manufacturer
Infineon Technologies AG
Number of Elements
1
Part Life Cycle Code
活跃
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Risk Rank
5.71
ECCN 代码
EAR99
端子位置
UNSPECIFIED
终端形式
无铅
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
compliant
JESD-30代码
R-XXUC-N
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
极性/通道类型
N-CHANNEL
漏极-源极导通最大电阻
0.05 Ω
DS 击穿电压-最小值
40 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
IPC218N04N3拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。