Infineon Technologies AG BSC096N10LS5
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BSC096N10LS5
1211-BSC096N10LS5
晶体管 - 特殊用途
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Power Field-Effect Transistor, 72A I(D), 100V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8, SOP-8
1最小包装量--
BSC096N10LS5详情
Infineon Technologies AG BSC096N10LS5重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
Contact plating
gold-plated
表面安装
YES
Number of pins
12
终端数量
8
晶体管元件材料
SILICON
外壳材料
1
Type of connector
pin strips
Connector
socket
Kind of connector
female
Spatial orientation
straight
Contacts pitch
2.54mm
Electrical mounting
SMT
Connector pinout layout
1x12
Gross weight
0.72 g
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
TDSON-8, SOP-8
Drain Current-Max (ID)
72 A
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Operating temperature
-40...163°C
JESD-609代码
e3
ECCN 代码
EAR99
端子表面处理
Tin (Sn)
端子位置
DUAL
终端形式
FLAT
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
not_compliant
Current rating
1.5A
时间@峰值回流温度-最大值(s)
未说明
JESD-30代码
R-PDSO-F8
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
漏极-源极导通最大电阻
0.0096 Ω
脉冲漏极电流-最大值(IDM)
287 A
DS 击穿电压-最小值
100 V
雪崩能量等级(Eas)
45 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
Rated voltage
60V
个人资料
beryllium copper
饱和电流
1
Plating thickness
0.254µm
Flammability rating
UL94V-0
BSC096N10LS5拓展信息
Infineon Technologies AG
Infineon Technologies AG
Infineon Technologies AG
Infineon Technologies AG
Infineon Technologies AG
Infineon Technologies AG
Infineon Technologies AG
Infineon Technologies AG
Infineon Technologies AG
Infineon Technologies AG







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