Infineon Technologies AG BSM150GB100D
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BSM150GB100D
1211-BSM150GB100D
晶体管 - IGBT - 单个
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Description: Insulated Gate Bipolar Transistor, 150A I(C), 1000V V(BR)CES, N-Channel, POWER MODULE-7
1最小包装量--
BSM150GB100D详情
Infineon Technologies AG BSM150GB100D重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
7
晶体管元件材料
SILICON
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Part Package Code
MODULE
Package Description
POWER MODULE-7
Number of Elements
2
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
ECCN 代码
EAR99
端子位置
UPPER
终端形式
UNSPECIFIED
Reach合规守则
compliant
引脚数量
7
JESD-30代码
R-PUFM-X7
资历状况
不合格
配置
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
箱体转运
ISOLATED
晶体管应用
电源控制
极性/通道类型
N-CHANNEL
集电极电流-最大值(IC)
150 A
集电极-发射器电压-最大值
1000 V
BSM150GB100D拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies







哦! 它是空的。