Infineon Technologies AG IPP65R115CFD7A
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IPP65R115CFD7A
1211-IPP65R115CFD7A
晶体管 - 特殊用途
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Description: Power Field-Effect Transistor, 21A I(D), 650V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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IPP65R115CFD7A详情
Infineon Technologies AG IPP65R115CFD7A重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
Contact plating
gold-plated
Number of pins
58
终端数量
3
晶体管元件材料
SILICON
外壳材料
1
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
TO-220, 3 PIN
Date Of Intro
2020-03-25
Drain Current-Max (ID)
21 A
Operating Temperature-Max
150 °C
Operating Temperature-Min
-40 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Type of connector
pin strips
Connector
socket
Kind of connector
female
Spatial orientation
straight
Contacts pitch
2.54mm
Electrical mounting
THT
Connector pinout layout
2x29
Row pitch
2.54mm
Gross weight
5.54 g
Operating temperature
-40...163°C
JESD-609代码
e3
ECCN 代码
EAR99
端子表面处理
TIN
附加功能
HIGH RELIABILITY
端子位置
SINGLE
终端形式
THROUGH-HOLE
Reach合规守则
unknown
Current rating
1.5A
参考标准
AEC-Q101
JESD-30代码
R-PSFM-T3
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
JEDEC-95代码
TO-220AB
漏极-源极导通最大电阻
0.115 Ω
脉冲漏极电流-最大值(IDM)
82 A
DS 击穿电压-最小值
650 V
雪崩能量等级(Eas)
97 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
114 W
Rated voltage
60V
个人资料
beryllium copper
Plating thickness
0.75µm
Flammability rating
UL94V-0
IPP65R115CFD7A拓展信息
Infineon Technologies AG
Infineon Technologies AG
Infineon Technologies AG
Infineon Technologies AG
Infineon Technologies AG
Infineon Technologies AG
Infineon Technologies AG
Infineon Technologies AG
Infineon Technologies AG
Infineon Technologies AG







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