参数名
参数值
参数名
参数值
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8541.29.00.95
Automotive
Unknown
PPAP
Unknown
Category
功率MOSFET
Process Technology
TMOS
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
40
Maximum Gate Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
3
Maximum Continuous Drain Current (A)
24.4
Maximum Gate Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain Source Resistance (MOhm)
43@10V
Typical Gate Charge @ Vgs (nC)
19.2@10V
Typical Gate Charge @ 10V (nC)
19.2
Typical Input Capacitance @ Vds (pF)
868@25V
Maximum Power Dissipation (mW)
41700
Typical Fall Time (ns)
15
Typical Rise Time (ns)
21.4
Typical Turn-Off Delay Time (ns)
32.5
Typical Turn-On Delay Time (ns)
11
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
表面贴装
Package Height
2.3
Package Width
6.1
Package Length
6.6
PCB changed
2
Tab
Tab
Standard Package Name
TO-252
Supplier Package
DPAK
Lead Shape
Gull-wing
Manufacturer Part Number
MDD3754RH
Manufacturer
MagnaChip Semiconductor Ltd
Part Life Cycle Code
活跃
Ihs Manufacturer
MAGNACHIP SEMICONDUCTOR LTD
Risk Rank
1.4
包装
卷带
零件状态
活跃
Reach合规守则
unknown
引脚数量
3
配置
Single
信道型
P