MagnaChip MDF1933TH

材料

Si

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

80

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

43

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (mOhm)

7.5@10V

Typical Gate Charge @ Vgs (nC)

59.4@10V

Typical Gate Charge @ 10V (nC)

59.4

Typical Input Capacitance @ Vds (pF)

3841@40V

Maximum Power Dissipation (mW)

27700

Typical Fall Time (ns)

15.1

Typical Rise Time (ns)

32.7

Typical Turn-Off Delay Time (ns)

24.2

Typical Turn-On Delay Time (ns)

15.6

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

16.13(Max)

Package Width

4.93(Max)

Package Length

10.71(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220F

Lead Shape

通孔

包装

Tube

零件状态

Unconfirmed

引脚数量

3

配置

Single

信道型

N