MagnaChip MDS3653URH

表面安装

YES

终端数量

8

晶体管元件材料

SILICON

Maximum Gate Threshold Voltage (V)

2

Maximum Gate Source Voltage (V)

±20

Maximum Drain Source Voltage (V)

30

Number of Elements per Chip

1

Channel Mode

Enhancement

Process Technology

TMOS

Category

功率MOSFET

PPAP

Unknown

Automotive

Unknown

HTS

8541.29.00.95

ECCN (US)

EAR99

EU RoHS

供应商未确认

Maximum Continuous Drain Current (A)

13

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

7@10V

Typical Gate Charge @ Vgs (nC)

70@10V

Typical Gate Charge @ 10V (nC)

70

Typical Input Capacitance @ Vds (pF)

3000@15V

Maximum Power Dissipation (mW)

2500

Typical Fall Time (ns)

60

Typical Rise Time (ns)

15

Typical Turn-Off Delay Time (ns)

100

Typical Turn-On Delay Time (ns)

12

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

1.38

Package Width

3.9

Package Length

4.9

PCB changed

8

Standard Package Name

SOP

Supplier Package

SOIC

Lead Shape

Gull-wing

Package Description

SMALL OUTLINE, R-PDSO-G8

Package Style

小概要

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

MDS3653URH

Package Shape

RECTANGULAR

Manufacturer

MagnaChip Semiconductor Ltd

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

MAGNACHIP SEMICONDUCTOR LTD

Risk Rank

5.73

包装

卷带

零件状态

活跃

HTS代码

8541.29.00.95

端子位置

DUAL

终端形式

鸥翼

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

unknown

引脚数量

8

JESD-30代码

R-PDSO-G8

配置

单四漏三源

操作模式

增强型MOSFET

晶体管应用

SWITCHING

极性/通道类型

P-CHANNEL

漏极-源极导通最大电阻

0.012 Ω

脉冲漏极电流-最大值(IDM)

58 A

DS 击穿电压-最小值

30 V

信道型

P

雪崩能量等级（Eas）

180 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR