MagnaChip MMD60R360PBRH

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

超级交界处

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

11

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

380@10V

Typical Gate Charge @ Vgs (nC)

28@10V

Typical Gate Charge @ 10V (nC)

28

Typical Input Capacitance @ Vds (pF)

890@25V

Maximum Power Dissipation (mW)

83000

Typical Fall Time (ns)

30

Typical Rise Time (ns)

40

Typical Turn-Off Delay Time (ns)

80

Typical Turn-On Delay Time (ns)

18

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.39(Max)

Package Width

6.1

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

Lead Shape

Gull-wing

Continuous Drain Current

11(A)

Drain-Source On-Volt

600(V)

Operating Temperature Classification

Military

Package Type

DPAK

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±30(V)

Number of Elements

1

Rad Hardened

无

Schedule B

8541290080, 8541290080/8541290080, 8541290080/8541290080/8541290080, 8541290080/8541290080/8541290080/8541290080

RoHS

Non-Compliant

包装

卷带

零件状态

Unconfirmed

类型

功率MOSFET

引脚数量

3

极性

N

配置

Single

功率耗散

83(W)

信道型

N