Microchip APT1001RBVRG

安装类型

通孔

包装/外壳

TO-247-3

供应商器件包装

TO-247 [B]

RoHS

Non-Compliant

Continuous Drain Current Id

11

Package

Tube

Base Product Number

APT1001

Current - Continuous Drain (Id) @ 25℃

11A (Tc)

厂商

微芯片技术

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

1 kV

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

280 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

Microchip

Brand

Microchip Technology / Atmel

Qg - Gate Charge

225 nC

Rds On - Drain-Source Resistance

1 Ohms

Id - Continuous Drain Current

11 A

系列

POWER MOS V®

包装

Tube

性别

Female

子类别

MOSFETs

技术

MOSFET (Metal Oxide)

配置

Single

通道数量

1 Channel

功率耗散

280

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1Ohm @ 500mA, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 1mA

输入电容(Ciss)(Max)@Vds

3660 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

225 nC @ 10 V

漏源电压 (Vdss)

1000 V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET