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价格梯度
内地含税价
1
¥736.437868
10
¥694.752705
100
¥655.427083
500
¥618.327434
1000
¥583.327766
APT10025JVFR详情
Microchip APT10025JVFR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
底座安装
包装/外壳
SOT-227-4, miniBLOC
供应商器件包装
ISOTOP®
Package
Tube
Base Product Number
APT10025
Current - Continuous Drain (Id) @ 25℃
34A (Tc)
厂商
微芯片技术
Product Status
活跃
Vr - Reverse Voltage
200 V
Vds - Drain-Source Breakdown Voltage
1000 V
Typical Turn-On Delay Time
22 ns
Vgs th - Gate-Source Threshold Voltage
2 V
Pd - Power Dissipation
700 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Unit Weight
1.058219 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
1
Mounting Styles
螺钉安装
Manufacturer
Microchip
Brand
微芯片技术
Rds On - Drain-Source Resistance
250 mOhms
RoHS
Details
Typical Turn-Off Delay Time
97 ns
Id - Continuous Drain Current
34 A
系列
POWER MOS V®
包装
Tube
类型
FRED Module
子类别
Discrete Semiconductor Modules
技术
MOSFET (Metal Oxide)
工作电源电压
0.5 V
配置
Single
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
250mOhm @ 500mA, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 5mA
输入电容(Ciss)(Max)@Vds
18000 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
990 nC @ 10 V
上升时间
20 ns
漏源电压 (Vdss)
1000 V
产品类别
Discrete Semiconductor Modules
场效应管特性
-
产品
功率MOSFET模块
产品类别
Discrete Semiconductor Modules
APT10025JVFR拓展信息
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