Microchip APT1003RBFLLG

包装/外壳

TO-247-3

房屋材料

Aluminum

Number of Outlets

None

Manufacturer Part Number

P-R2#5-K3RX

Manufacturer

Grace Technologies

Vds - Drain-Source Breakdown Voltage

1 kV

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

139 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

通孔

Channel Mode

Enhancement

Brand

微芯片技术

Qg - Gate Charge

34 nC

Rds On - Drain-Source Resistance

3 Ohms

RoHS

Details

Id - Continuous Drain Current

4 A

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

产品类别

MOSFET

产品类别

MOSFET

知识产权评级

IP65