Microchip APT10045JLL

包装/外壳

Wide 2010 (5025 Metric), 1020

安装类型

底座安装

供应商器件包装

-

Package

Tape & Reel (TR)

Base Product Number

WK73R2H

厂商

KOA Speer Electronics, Inc.

Product Status

活跃

Continuous Drain Current Id

21

Current - Continuous Drain (Id) @ 25℃

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

460W (Tc)

Vds - Drain-Source Breakdown Voltage

1 kV

Typical Turn-On Delay Time

10 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

460 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

1.058219 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

螺钉安装

Manufacturer

Microchip

Brand

Microchip Technology / Atmel

Tradename

POWER MOS 7, ISOTOP

Rds On - Drain-Source Resistance

450 mOhms

RoHS

Details

Typical Turn-Off Delay Time

30 ns

Id - Continuous Drain Current

21 A

操作温度

-55°C ~ 155°C

系列

WK73R

包装

Tube

尺寸/尺寸

0.098 L x 0.197 W (2.50mm x 5.00mm)

容差

±1%

终止次数

2

温度系数

±200ppm/°C

类型

功率MOSFET

电阻

953 kOhms

组成

厚膜

功率(瓦特)

1W

子类别

Discrete Semiconductor Modules

技术

MOSFET (Metal Oxide)

配置

Single

通道数量

1 Channel

功率耗散

460

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

450mOhm @ 11.5A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 2.5mA

输入电容(Ciss)(Max)@Vds

4350 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

154 nC @ 10 V

上升时间

5 ns

漏源电压 (Vdss)

1000 V

Vgs（最大值）

±30V

产品类别

Discrete Semiconductor Modules

信道型

N

场效应管特性

-

产品

功率MOSFET模块

特征

Automotive AEC-Q200, Moisture Resistant

产品类别

Discrete Semiconductor Modules

座位高度(最大)

0.028 (0.70mm)

宽度

25.4 mm

高度

9.6 mm

长度

38.2 mm

评级结果

AEC-Q200